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  • 2SK2850-01 Datasheet (PDF) 0.1. 2sk2850-01.pdf Size:316K fuji. 2sk2850.pdf Size:224K inchangesemiconductor. Isc N-Channel MOSFET Transistor 2SK2850DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral.
  • Circuit dan perbedaan produk rekayasa elektronik praktis dan otomatis persamaan dan perbedaan produk feb 25 2010 in a grounded emitter transistor circuit, persamaan ic mosfet dan scr 10 3 2019 persamaan.

Type Designator: TIP2955

Material of Transistor: Si

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PERSAMAAN TRANSISTOR DAN MOSFET Kelompok 3. Danang Rahmad. Fahmawati Hamida. Hamdan Cahyo. Rizal Maulana. Vany Isnaini MOSFET Kaki transistor terdiri dari, Drain (D), Source (S) dan Gate (G). Kaki Mosfet ada yang bertipe kanal-p dan kanal-n. Daerah source dan drain diberi difusi p+, dan untuk kondisi yang lain adalah sama dengan NMOS. Karaktristik dan Operasi MOSFET Grafik karakteristik MOSFET (NMOS) arus I D sebagai fungsi V DS dengan parametr V GS ditunjukkan dalam Gambar 5. Pada MOSFET terdapat tiga daerah operasi yaitu daerah cut-off, linear dan saturasi. Buku Persamaan Ic Dan Transistor As A Switch. 2/26/2018 0 Comments. IC regulator untuk bias MOSFET,tipe 7805. Transistor Driver boleh dipasang juga. Sekedar saran untuk transistor Driver anda dapat menggunakan jenis BD139 yang kualitas bagus dan mampu untuk RF. Bisa juga diganti 2SC1383, ataupun 2N2219A.

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

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Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

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Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

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Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

TIP2955 Transistor Equivalent Substitute - Cross-Reference Search


TIP2955 Datasheet (PDF)

0.1. tip2955-3055.pdf Size:47K _st

TIP2955TIP3055 COMPLEMENTARY SILICON POWERTRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, output3stages and hi-fi amplifiers.2The complementary PNP type is the TIP2955

0.2. tip2955.pdf Size:37K _st

TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the TIP2955.21TO-218INTERNAL SCHEMATI

0.3. tip2955 tip3055.pdf Size:87K _st

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

0.4. tip3055 tip2955.pdf Size:61K _onsemi

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

0.5. tip2955.pdf Size:81K _bourns

TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi

0.6. tip2955 tip3055.pdf Size:107K _mospec

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0.7. tip2955f tip3055f.pdf Size:290K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

0.8. tip2955.pdf Size:221K _inchange_semiconductor

isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi

0.9. tip2955t.pdf Size:217K _inchange_semiconductor

isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

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Datasheet: TIP147T, TIP150, TIP151, TIP152, TIP160, TIP161, TIP162, TIP29, C102, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054.



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